研究目的
Investigating the defect physics and loss mechanisms in Cu(In,Ga)Se2 (CIGSe) solar cells through voltage dependent admittance spectroscopy and device simulation.
研究成果
The study provides a comprehensive understanding of defect physics in CIGSe solar cells through voltage dependent admittance spectroscopy and device simulation. It identifies a deep recombination-active acceptor state at the absorber/buffer interface and explains the reduction in power conversion efficiency due to air-light exposure. The simulation model helps in refining the parameters of interface defects and understanding the N1 feature in admittance measurements.
研究不足
The study is limited to temperatures between 110 K and 300 K and bias voltages between -0.5 V and +0.375 V. The complexity of the simulation model is kept small by excluding the temperature dependence of certain parameters.
1：Experimental Design and Method Selection
The study employs 1-dimensional device simulation using SCAPS 1d to understand the defect physics in CIGSe solar cells. Admittance spectroscopy is used to monitor chargeable defects within the bandgap.
2：Sample Selection and Data Sources
Two samples, CIGSe A and B, differing in their air-light exposed (ALE) status of the CIGSe absorber layer, were compared. Sample CIGSe A received a 60 min ALE-treatment, while sample CIGSe B served as a reference without ALE.
3：List of Experimental Equipment and Materials
Agilent E4980A LCR meter for C-f analysis, CY7 Omega Si-diode for temperature measurement, tungsten halogen lamp for ALE-treatment, and various materials for solar cell fabrication including CIGSe absorbers, CdS buffer layer, and ZnO layers.
4：Experimental Procedures and Operational Workflow
Admittance spectroscopy was conducted with temperature varied from 90 to 300 K in 10 K steps, and C-f analysis was performed from 100 to 106 Hz with an AC signal amplitude of 50 mV. A DC bias voltage was applied in the range from -1 to 0.75 V.
5：Data Analysis Methods
The analysis of admittance signatures provides information about defect properties like density of states, energy levels, and capture cross sections. Simulation of dark J-V curves was used to determine electron capture cross sections.
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