1：Experimental Design and Method Selection:

The study involved the deposition of Sb layers of varying thicknesses on Mo-coated soda-lime glass substrates, followed by the co-evaporation of Cu, In, and Ga to form CIGSe metal precursors. A Se film was then deposited, and the samples were annealed via a rapid thermal process at 450 °C.

2：Sample Selection and Data Sources:

Samples were prepared with Sb layers of 5, 10, and 20 nm thicknesses, alongside a control sample without Sb.

3：List of Experimental Equipment and Materials:

Equipment included a rapid thermal process chamber, SEM, STEM-EDS, SIMS, XRD, FLIM system, and AS measurement setup. Materials included Mo-coated soda-lime glass, Cu, In, Ga, Se, and Sb.

4：Experimental Procedures and Operational Workflow:

The process involved precursor deposition, Se film deposition, annealing, and characterization using various techniques to analyze the effects of Sb incorporation.

5：Data Analysis Methods:

Data were analyzed using SEM, STEM-EDS, SIMS, XRD, FLIM, and AS to evaluate grain size, elemental distribution, crystallinity, carrier lifetime, and defect states.