研究目的
To demonstrate a regrowth-free double-tapered gain-coupled distributed feedback semiconductor laser designed based on periodic surface current injection to achieve high-power and single-longitudinal mode operation.
研究成果
The regrowth-free double-tapered gain-coupled DFB semiconductor laser achieves high output power and single-longitudinal mode operation with excellent beam quality. It is produced by standard i-line lithography, offering low-cost and easy fabrication technique with potential for widespread commercial applications.
研究不足
The mode degradation at higher currents is potentially caused by mode competition and temperature rise within the device. The slope efficiency and output power of the gain-coupled DFB laser device are inferior to the FP laser device.
1：Experimental Design and Method Selection:
The device consists of a ridge waveguide with 44th-order gain-coupled grooves and two symmetrical tapered waveguides for optical amplification. The design aims to achieve fundamental transverse mode and single-longitudinal mode emission.
2：Sample Selection and Data Sources:
The epitaxial layer structure was grown by metal organic chemical vapor deposition on a GaAs substrate.
3：List of Experimental Equipment and Materials:
Standard i-line lithography technique and inductively coupled plasma dry etching were used for fabrication.
4：Experimental Procedures and Operational Workflow:
The device structure was precisely defined and formed, followed by metallization, cleaving into bars, and packaging.
5：Data Analysis Methods:
Optical output power, spectrum, spectral width, and far-field patterns were measured under continuous-wave conditions.
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