摘要： Graphene is a promising 2D material for solar cell and energy storage applications. Graphene based materials such as Graphene oxide (GO) are proposed as anode materials for Lithium ion batteries, transparent conducting films, electrodes in polymer based solar cells and many other applications. The present paper discusses laser induced micro structural changes in reduced GO (r-GO) thin films. GO was prepared by Modified Hummers Method, which is easy and low cost method for its large-scale production. The samples were thermally annealed at 400°C to obtain r-GO. To study the influence of laser exposure on micro structure of r-GO, the Raman spectra was recorded after exposure to different time 2, 4, 6 and 8 minutes. Two different laser intensities (95 and 159 KW/cm2) were used to do the same. A blue shift in peak positions and change in ratio of intensity were observed in D and G peaks of Raman spectra after exposure. A total Raman blue shift of about 5 cm-1 is noted in each case, which is due to increased compressive stress between the carbon-carbon bonds. The Raman data was used for calculations of residual stress, grain size and defect density, which changes in gradual pattern with increase in power density and time of exposure. From these observations, it can be concluded that r-GO thin film undergoes micro-structural changes at exposed portion, without affecting rest of the film.