研究目的
Investigating the growth of GaN-based LEDs on (?2 0 1)-oriented β-Ga2O3 single crystal substrates using two different approaches to improve the crystal quality of the GaN epilayer.
研究成果
The study successfully demonstrated two methods for fabricating GaN-based LEDs on (?2 0 1) β-Ga2O3 substrates, showing improved crystal quality with continuous growth. The LEDs exhibited quantum-confinement and screen effects, with successful operation despite surface imperfections.
研究不足
The poor thermal conductivity and monoclinic crystal structure of the (?2 0 1) β-Ga2O3 substrate led to cracks and pits on the LED structure surface, potentially affecting device performance.
1：Experimental Design and Method Selection:
Two methods were tested for growing GaN epilayers on (?2 0 1) β-Ga2O3 substrates: non-continuous growth between low-temperature undoped-GaN (u-GaN) and high-temperature u-GaN, and continuous growth during temperature increase.
2：Sample Selection and Data Sources:
Commercial 2 inch (?2 0 1) β-Ga2O3 wafers were used, cut into 10 mm by 10 mm pieces, and cleaned.
3：List of Experimental Equipment and Materials:
Atmospheric pressure metal-organic chemical vapor deposition (APMOCVD) system, trimethylgallium and NH3 as reactant sources, and In balls for current injection.
4：Experimental Procedures and Operational Workflow:
GaN buffer layer growth, followed by u-GaN film growth at different temperatures for the two methods, and LED structure fabrication.
5：Data Analysis Methods:
X-ray diffraction (XRD) analysis, power-dependent photoluminescence (PL) measurements, and electroluminescence (EL) spectra analysis.
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