研究目的
Investigating the photovoltaic properties of a GaN/Si nanoheterostructure array solar cell fabricated using a silicon nanoporous pillar array (Si-NPA) substrate.
研究成果
The n-GaN NCCs were successfully grown on Si-NPA by CVD method, forming a mass nanoheterostructure solar cell with a power conversion efficiency of 7.29%. The results provide a new conception of mass-nanoheterojunctions for photovoltaic applications.
研究不足
The main disadvantage for the device is the low fill factor (FF) due to large defect states and interface states. Improving the crystal and interfacial quality could increase the FF and energy conversion efficiency.
1：Experimental Design and Method Selection:
The GaN/Si nanoheterostructure array was synthesized using the CVD method on a Si-NPA substrate.
2：Sample Selection and Data Sources:
A p-type (111) oriented single-crystal silicon wafer was used to prepare Si-NPA through a hydrothermal etching process.
3：List of Experimental Equipment and Materials:
High-purity metal Ga and NH3 gas were used as Ga and N sources, respectively. A vacuum tube furnace was used for the CVD process.
4：Experimental Procedures and Operational Workflow:
The chamber was evacuated and heated in Ar atmosphere, followed by NH3 introduction for GaN growth. ITO and Ag films were deposited as electrodes.
5：Data Analysis Methods:
The photovoltaic properties were investigated under 1 sun AM 1.5G illumination.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
