研究目的
Investigating the effect of differences in anti-reflection coating (ARC) and the conduction type of the substrate used as a base for PV cells on potential-induced degradation (PID).
研究成果
The study concludes that polarization-type PID due to charge accumulation occurs in both n-type and p-type crystalline Si PV modules, and it is influenced by the ARC structure rather than the conduction type of the substrate.
研究不足
The study focuses on crystalline Si PV modules with specific ARC structures, and the findings may not be directly applicable to other types of PV modules or ARC configurations.
1：Experimental Design and Method Selection:
The study involved applying high voltage to n-type and p-type crystalline Si PV modules to observe PID effects.
2：Sample Selection and Data Sources:
PV modules with p-type and n-type crystalline Si PV cells with SiNx or SiNx/SiO2 stacked ARC layers were used.
3：List of Experimental Equipment and Materials:
PV modules consisted of front cover glass, ethylene-vinyl acetate encapsulant, crystalline Si cells, and a back sheet.
4：Experimental Procedures and Operational Workflow:
PID tests were carried out by applying voltage between the grounded Al tape and the shorted inter-connector ribbons of the cell at 85°C.
5：Data Analysis Methods:
Photo and dark J–V characteristics and external quantum efficiency (EQE) were measured before and after PID tests.
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