摘要： High-temperature β-Ga2O3 Schottky diodes with very low leakage currents, capable of sensitive UVC detection at 350 oC, were fabricated on 201 β-Ga2O3 single crystal substrates using intentionally-oxidized ruthenium (RuOx) Schottky contacts (SCs), with x = ~2.1. These RuOx:β-Ga2O3 SCs were characterized by rectification ratios of more than 1010 at ± 3 V and very low reverse leakage current densities of less than 1 nAcm-2 (~1 pA) at ?3.0 V, that were unchanged from 24 to 350 oC. These very low high-temperature leakage currents were due to their extremely high Schottky barriers of 2.2 eV at 350 oC, that were stable against repeated operation at this temperature. Although not optimized for photodetection, these SCs could detect UVC (λ = 248 nm) radiation at a temperature of 350 oC with a UVC/dark current ratio of ~103. The very high and thermally stable rectifying barriers of these RuOx:β-Ga2O3 SCs makes them strong candidates for use in high temperature β-Ga2O3 rectifying diodes and UVC photodetectors.