研究目的

The aim of our work is to apply the ideality factor for evaluating the contaminant concentration. In the heuristic approach we use, the following milestones can be distinguished (i) the dark ?? ? ?? characteristic is simulated for SCs with known contaminant composition; (ii) the obtained characteristic is fitted according to the double-diode model and the ideality factor is estimated; (iii) the initial impurity concentration and the calculated ideality factor value are used for deriving analytic or grading dependencies.

研究成果

The relationship between the diode ideality factor and the iron concentration in the base layer of silicon ??+ ? ?? solar cells has been studied via computer simulation. The data used in the simulations were the following. The iron concentration ranged from 1010 to 1013 cm?3, the base doping level — from 1015 to 1017 cm?3, and the temperature — from 290 to 340 K. The obtained results show that the ideality factor value can be used to estimate the contaminant concentration.

研究不足

The study simplifies the task by considering only three variables (temperature, doping level, and iron concentration) and the obtained analytical expression is supposed to be used only for approximation case. The geometry of the solar cell (e.g. base layer thickness) also affects the magnitude of ideality factor, which is not considered in detail.