研究目的
To evaluate the dissolved oxygen concentration in silicon wafers by measuring infrared absorption in attenuated total reflection (ATR) spectra and compare it with transmission-based evaluation.
研究成果
The study demonstrates that quantitative evaluation of oxygen concentration in thin silicon wafers can be achieved through ATR measurements with appropriate preprocessing, showing a strong correlation with transmission-based methods after polishing.
研究不足
The study is limited to silicon wafers with optically flat surfaces and specific thickness. The correlation between ATR and transmission spectra was not sufficient before polishing.
1：Experimental Design and Method Selection:
The study used Fourier-transform infrared spectrometer (FTIR) for measuring infrared absorption spectra in both transmission and ATR modes.
2：Sample Selection and Data Sources:
Nine monocrystalline silicon wafers with optically flat surfaces were used, polished to 450 ± 10 μm thickness.
3：List of Experimental Equipment and Materials:
Shimadzu FTIR with an ATR attachment, chemical-mechanical polishing equipment.
4：Experimental Procedures and Operational Workflow:
Transmission and ATR spectra were measured and compared. The absorbance spectra were calculated for both methods.
5：Data Analysis Methods:
The peak height of the oxygen absorption at 1107 cm-1 was evaluated for both transmission and ATR spectra, with a linear baseline between 1040 cm-1 and 1160 cm-1.
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