研究目的
Investigating the fabrication and spectral properties of terahertz anti-reflection structures on high-resistivity silicon using femtosecond laser processing.
研究成果
The fabricated silicon moth-eye broadband AR structure shows promising broadband increase in transmissivity from 0.3 to 2.5 THz, with maximum values above 90%. The observed high-frequency drop-off in transmittance is attributed to changing material property near the fabricated region, possibly due to amorphization of silicon under femtosecond laser irradiation. This structure is a promising device for high-power and high-sensitivity THz applications, particularly in the 1-2 THz range.
研究不足
The exact origin of the absorption causing the high-frequency drop-off in transmittance is unclarified. Potential areas for optimization include the height of the fabricated moth-eye structure for better AR functionality in the low-frequency regime.
1：Experimental Design and Method Selection:
Fabrication of terahertz anti-reflection structures on high-resistivity silicon using femtosecond laser processing. Measurement of spectral properties by terahertz time-domain spectroscopy. Numerical simulation to investigate observed spectral characteristics.
2：Sample Selection and Data Sources:
High-resistivity silicon plates with fabricated moth-eye structures.
3：List of Experimental Equipment and Materials:
Femtosecond laser system (190 fs, 1028-nm Yb:KGW ultrafast regenerative amplifier), laser scanning microscope, terahertz time-domain spectroscopy setup.
4：Experimental Procedures and Operational Workflow:
Ablating grooves in a lattice pattern on each sample surface to create moth-eye structures. Characterization of structure morphology by laser scanning microscope. Measurement of optical properties by THz-TDS.
5：Data Analysis Methods:
Rigorous coupled wave analysis (RCWA) for numerical calculation of transmittance spectra.
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