研究目的
Investigating the use of an amorphous Ge0.83Si0.17 lateral taper to enable a low-loss small-footprint optical coupling between a Si3N4 waveguide and a low-voltage Ge-based Franz–Keldysh optical modulator on a bulk Si substrate.
研究成果
The proposed amorphous Ge0.83Si0.17 taper enables efficient optical coupling between Si3N4 waveguides and Ge-based optical modulators on bulk Si substrates, offering workable values of ER and IL for optical interconnect applications with a compact footprint. The structure shows promise for integration in advanced CMOS processes.
研究不足
The study is theoretical and relies on simulation results, which may not fully account for all practical fabrication challenges and material imperfections.
1：Experimental Design and Method Selection:
The study employed 3D Finite-Difference Time-Domain (3D-FDTD) simulation to investigate the optical coupling between a Si3N4 waveguide and a Ge-based optical modulator using an amorphous GeSi lateral taper.
2：Sample Selection and Data Sources:
The simulation focused on the fundamental optical mode of the 1 μm high and 1 μm wide Si3N4 waveguide and the 200 nm high and 590 nm wide Ge-based FKE optical modulator.
3：List of Experimental Equipment and Materials:
The study utilized amorphous Ge0.83Si0.17 for the taper, with specific dimensions and refractive index properties.
4：83Si17 for the taper, with specific dimensions and refractive index properties.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The simulation analyzed the optical coupling performance based on different parameters of the proposed amorphous GeSi taper, including taper tip width, taper end width, taper length, and refractive index variation.
5：Data Analysis Methods:
The performance was evaluated in terms of extinction ratio (ER) and insertion loss (IL) for optical interconnect applications.
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