研究目的
To improve the noise characteristics in laser detection systems by simulating a separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiode (SAGCM APD) with double guard rings and three thin layers of InGaAsP, and optimizing the multiplication width of SAGCM APD.
研究成果
The proposed InP/InGaAs SAGCM APD structure with double guard rings, three thin layers of InGaAsP, and optimized multiplication width significantly improves noise characteristics, reduces dark current, and increases the SNR. The excess noise factor is reduced by 10.3%, and the photocurrent and dark current show superior performance compared to other works. The structure also simplifies biasing and reduces power consumption.
研究不足
The study is based on simulation results, and actual experimental validation is required to confirm the findings. The performance of the APD may vary under different environmental conditions and manufacturing tolerances.
1：Experimental Design and Method Selection:
The study involves the simulation of a new InP/InGaAs SAGCM APD structure with double guard rings and three thin layers of InGaAsP. The multiplication width of SAGCM APD is optimized to enhance noise characteristics.
2：Sample Selection and Data Sources:
The simulation is based on the proposed structure's parameters, including layer thicknesses and doping concentrations.
3：List of Experimental Equipment and Materials:
The simulation uses parameters for binary compounds (InP) and ternary compounds (In.53Ga.47As).
4：Experimental Procedures and Operational Workflow:
The simulation involves numerical analysis using a two-dimensional drift-diffusion transmission model and recombination process, including Shockley-Reed Hall recombination, Trap-Assisted Tunneling (TAT), Auger recombination, and band-to-band tunneling (BBT).
5：Data Analysis Methods:
The analysis includes the calculation of photocurrent, dark current, excess noise factor, and signal-to-noise ratio (SNR) to evaluate the performance of the proposed APD structure.
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