研究目的
To design a transparent p-n junction-based photodetector with high detectivity and self-powered feature using a cross-bar structure of aligned n-SnO2 and p-NiO nanofibers.
研究成果
The cross-bar p-n junction photodetector made of n-SnO2 and p-NiO nanofibers exhibits high transparency, high detectivity, and self-powered features, demonstrating its potential for next-generation transparent electronic devices.
研究不足
The study focuses on the fabrication and performance of the photodetector under specific conditions, and further optimization may be required for broader applications.
1：Experimental Design and Method Selection:
The study employs a cross-bar structure for the photodetector, utilizing aligned n-SnO2 and p-NiO nanofibers prepared via electrospinning.
2：Sample Selection and Data Sources:
The materials used include SnCl2·2H2O, NiNO3·6H2O, polyvinylpyrrolidone, and ethanol.
3：List of Experimental Equipment and Materials:
Equipment includes a field-emitting scanning electron microscope (Zeiss Sigma), X-ray diffraction (Bruker D8-A25), and a semiconductor characterization system (Keitheley 4200-SCS).
4：Experimental Procedures and Operational Workflow:
The process involves electrospinning to create nanofiber arrays, annealing to oxidize the fibers, and pressing indium dots as contacts.
5：Data Analysis Methods:
The performance is evaluated based on responsivity, detectivity, and transmittance spectra.
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