研究目的
Investigating the fabrication and performance of a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures for continuous-wave (CW) terahertz (THz) applications.
研究成果
The fabricated 1.3-μm QD LC-DFB laser with shallow-etched gratings exhibits high performance with a large SMSR of 47 dB and high thermal stability. Dual-wavelength lasing with a wide tuning range from 0.5 to 73.4 nm was achieved, offering a new opportunity for CW THz radiation generation.
研究不足
The study focuses on the fabrication and performance of LC-DFB lasers under specific conditions. The scalability and integration of these lasers into practical THz systems may require further optimization.
1：Experimental Design and Method Selection:
The LC-DFB laser was fabricated with shallow-etched gratings to avoid the overgrowth step and reduce the aspect ratio in grating etching. The design involves modulation p-doping and rapid thermal annealing (RTA) process for high material gain.
2：Sample Selection and Data Sources:
InAs/GaAs QD laser structures were grown on Si-doped GaAs (100) substrates by a MBE system. The active region consists of eight stacks of QD layers.
3：List of Experimental Equipment and Materials:
MBE system for growth, PECVD for SiO2 deposition, ICP for etching, EBL for grating definition, and SEM for characterization.
4：Experimental Procedures and Operational Workflow:
Fabrication involved defining the ridge waveguide, shallow etching of gratings, and deposition of Ohmic contacts. The laser bars were mounted on a copper heat sink for measurements under CW operation.
5：Data Analysis Methods:
The performance was characterized by P–I–V measurements, temperature dependence of emission wavelength, and spectral analysis for SMSR and thermal stability.
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