研究目的
To present the TCAD simulation package of the laser annealing process (LIAB), focusing on the phase field model and calibration of relevant materials, and to detail a methodology for materials calibration, especially challenging in the melting regime, with results shown for Ge and SiGe, including a typical p-type finFET contact region anneal 2D use case.
研究成果
The study successfully applied the material calibration methodology to Ge and Si(1-x)Gex (x = 0.2, 0.3, 0.4) for which a fair agreement with experimental data was achieved. The laser annealing of an advanced p-type finFET with SiGe contact regions was modelled as a typical 2D use case, showing that process flow optimization together with an accurate control of laser annealing parameters is mandatory to avoid unwanted melt-mediated diffusion effects.
研究不足
The study acknowledges the minor discrepancies in steepness due to the ion-beam mixing effect, a limitation of the SIMS measurement, which is known to underestimate the abruptness of sharp profiles. Such minor discrepancies do not impact the overall accuracy of the material properties calibration.
1：Experimental Design and Method Selection:
The study involves the development of a finite element method based computational tool dedicated to the simulation of LTA process for 1D, 2D and 3D structures as a user-friendly TCAD package. The heat equation coupled to the time-harmonic solution of Maxwell equations, phase field and species diffusion is solved self-consistently.
2：Sample Selection and Data Sources:
For Ge calibration, p-type 200 mm diameter Si(001) wafers with a resistivity in the 5-10 Ohm.cm range were used as starting material. For SiGe calibration, 30 nm thick pseudomorphic Si1-xGex layers (with Ge fraction x = 0.2, 0.3 and 0.4) were grown on n-type Si (100)-oriented 300 mm substrates.
3：2, 3 and 4) were grown on n-type Si (100)-oriented 300 mm substrates.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: SCREEN-LT3100 pulsed excimer laser annealing system, M2000 Woollam spectroscopic ellipsometer, Instec heating cell, PHI ADEPT 1010 system for D-SIMS, ION TOF ToF-SIMS 5 system for ToF-SIMS.
4：Experimental Procedures and Operational Workflow:
Ge and SiGe samples were annealed with SCREEN-LT3100 pulsed excimer laser annealing system on 15x15 mm2 areas considering a wide energy density range. Complex relative permittivities were measured on dedicated unannealed sample pieces. In-situ TRR at 635 nm wavelength was used to detect the melt thresholds and melt durations. Chemical species depth profiles were obtained using D-SIMS and ToF-SIMS.
5：Data Analysis Methods:
The simulated ED is adjusted to match the experimental melt depth for each condition. The species diffusion parameters are adjusted to reproduce the chemical profiles. The optical refractive index of the liquid phase is adjusted so that the simulated ED corresponds to the experimental one at each melt depth.
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