研究目的
Investigating the effect of employing an InyAl1?yN and AlyGa1?yN interlayer in the InxGa1?xN/GaN active region for green light-emitting diodes (LEDs) to improve device performance.
研究成果
The study concludes that the use of 10 ? thick Al0.8Ga0.2N and In0.2Al0.8N interlayers in InxGa1?xN/GaN QW LEDs significantly improves the overlap of electron and hole wave functions, enhancing the device performance. The Al0.8Ga0.2N interlayer shows the best performance, increasing the Meh up to 2 times compared to LEDs without any interlayer.
研究不足
The study is based on theoretical simulations and comparisons with limited experimental data. The practical implementation of the proposed interlayers in LED fabrication may face challenges related to material growth and interface quality.
1：Experimental Design and Method Selection:
The study involves theoretical simulation and comparison with experimental results to understand the effect of InyAl1?yN and AlyGa1?yN interlayers on the performance of InxGa1?xN/GaN QW LEDs.
2：Sample Selection and Data Sources:
The study considers 30 ? In
3：26Ga74N QW and compares the results with experimental data from Alhassan et al. [23] and Sun et al. [24]. List of Experimental Equipment and Materials:
The study uses MATLAB software for simulations, considering parameters like lattice constant, dielectric constant, bandgap, effective mass, and spontaneous polarization.
4：Experimental Procedures and Operational Workflow:
The study involves self-consistent solution of Schr?dinger and Poisson’s equations to calculate electron-hole wave functions, carrier concentrations, and energy states in the QW.
5：Data Analysis Methods:
The study analyzes the transition energy and the square of the overlap of electron and hole wave functions (Meh) to evaluate the performance of the LEDs.
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