摘要： Layered metal monochalcogenides have attracted significant interest in the 2D family since they show different unique properties from their bulk counterparts. The comprehensive synthesis, characterization, and optoelectrical applications of 2D-layered tin monosulfide (SnS) grown by pulsed laser deposition are reported. Few-layer SnS-based field-effect transistors (FETs) and photodetectors are fabricated on Si/SiO2 substrates. The premium 2D SnS FETs yield an on/off ratio of 3.41 × 106, a subthreshold swing of 180 mV dec?1, and a field effect mobility (μFE) of 1.48 cm2 V?1 s?1 in a 14-monolayer SnS device. The layered SnS photodetectors show a broad photoresponse from ultraviolet to near-infrared (365–820 nm). In addition, the SnS phototransistors present an improved detectivity of 9.78 × 1010 cm2 Hz1/2 W?1 and rapid response constants of 60 ms for grow-time constant τg and 10 ms for decay-time constant τd under extremely weak 365 nm illumination. This study sheds light on layer-dependent optoelectronic properties of 2D SnS that promise to be important in next-generation 2D optoelectronic devices.