摘要： In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin, uniform and orientation-controlled nanowires (NWs), there is limited report until now addressing their orientation-dependent properties in this important one-dimensional material system, where all these are essential information for the deployment of applications. Using various GaSb NWs CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility (cid:1766)111(cid:1767)-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by the newly developed surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in solid catalysts, our Pd-catalyzed VSS-NWs. As stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface interface for efficient orientation at epitaxial NW nucleation. Over 95% high crystalline quality NWs were grown in (cid:1766)111(cid:1767) orientation for a wide diameter range of between 10 and 70 nm. Back-gated the field-effect Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ～330 cm2 V-1 s-1, close to the mobility limit for a NW channel diameter of ～30 nm with a free carrier concentration of ～1018 cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.