研究目的
Investigating the effects of different implantation shapes on the dark current and response spectrum of long-wave infrared HgCdTe photodiodes.
研究成果
The dark current in n-on-p planar junction devices near 77 K at zero bias was mainly restricted by the diffusion current and the generation-recombination current. The implantation shape affects not only the response spectra of the devices but also the dark current characteristics. Devices with circular implantation areas demonstrated better spectral absorption with an almost unchanged dark current level compared to square implantation areas.
研究不足
The study is limited by the quality of the crystal material and the process level of the devices, which could affect the accuracy of the results. Additionally, the doping concentration extracted was lower than expected, indicating potential issues with the activation annealing process.
1：Experimental Design and Method Selection:
The study involved measuring resistance-voltage curves of B+-implanted n-on-p Hg1-xCdxTe photodiodes with different implantation shapes (circular and square) across a temperature range of 20–140 K. The response spectrum was measured to determine the cutoff wavelength.
2：Sample Selection and Data Sources:
Samples were fabricated on LPE-grown mercury vacancy-doped p-type HgCdTe with B+ implantation using square and circular masks.
3：List of Experimental Equipment and Materials:
Equipment included a cryogenic temperature controller (Model 22C), a Keithley 2450 SourceMeter, and a Nicolet 8700 spectrometer.
4：Experimental Procedures and Operational Workflow:
The I-V characteristics of the dark current were measured and fitted to reveal the dominant current-limiting mechanisms.
5：Data Analysis Methods:
The data were analyzed by fitting theoretical calculations to experimental data to determine R0A and dark current at different bias voltages.
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