研究目的
Investigating the use of suspended germanium waveguides for mid-infrared wavelengths to overcome the limitations of silicon-on-insulator platforms due to the high absorption of SiO2 at wavelengths above 4 μm.
研究成果
The study demonstrated suspended germanium waveguides for mid-infrared wavelengths with a propagation loss of approximately 5 dB/cm at both 3.8 μm and 7.67 μm. The platform leverages the transparency range of germanium and simplifies fabrication with a single lithographic etch step, making it a promising candidate for sensing applications.
研究不足
The study notes that contamination before germanium deposition may have introduced roughness in the germanium layer, potentially affecting waveguide performance. Further investigation is required to confirm this and optimize the fabrication process.
1：Experimental Design and Method Selection:
The study builds on previous work with suspended silicon devices using sub-wavelength grating (SWG) lateral cladding, extending the approach to germanium waveguides for mid-infrared wavelengths.
2：Sample Selection and Data Sources:
Germanium was grown on a 220 nm 6-inch SOI wafer using reduced pressure chemical vapour deposition.
3：List of Experimental Equipment and Materials:
ZEP520-A photoresist, e-beam lithography, inductively coupled plasma (ICP) etching, and hydrofluoric acid (HF) for etching.
4：Experimental Procedures and Operational Workflow:
The fabrication involved a single dry-etch step followed by HF etching to suspend the germanium waveguides.
5：Data Analysis Methods:
Propagation loss was measured using the cut-back method to eliminate the influence of grating couplers and tapers.
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