研究目的
Investigating the formation of a dopant-free p–n junction within n-type crystalline silicon using ultrathin conductive polymer films and its correlation to solar cell performance.
研究成果
PEDOT:PSS induces a large upward band bending in n-Si, forming an inversion layer. The addition of DMSO and higher PEDOT content increases the band bending magnitude, correlating with improved solar cell performance. Adequate passivation of the silicon surface and high conductivity of the polymer layer are essential for achieving high power conversion efficiency.
研究不足
The study is limited by the challenge of measuring Si core levels with XPS due to the thickness of PEDOT:PSS layers beyond the photoelectron mean-free path. Additionally, the incremental deposition of PEDOT:PSS is not readily practical, affecting the homogeneity and pinhole formation in ultrathin films.
1：Experimental Design and Method Selection:
The study involved the deposition of PEDOT:PSS films on n-Si substrates with varying formulations and thicknesses, followed by characterization using photoelectron spectroscopy (XPS and UPS) and solar cell performance testing.
2：Sample Selection and Data Sources:
n-type (100)-oriented, single-side polished and 300 μm thick single crystal Si wafers were used. PEDOT:PSS formulations included PH1000 and Al4083, with and without DMSO.
3：List of Experimental Equipment and Materials:
Spectroscopic ellipsometer (J. A. Woollam Corporation, Alpha-SE), photoelectron spectroscopy system (SPECS), solar simulator (Newport).
4：Experimental Procedures and Operational Workflow:
Samples were prepared by spin-coating PEDOT:PSS on Si wafers, followed by annealing. Film thickness was determined by ellipsometry. XPS and UPS measurements were performed to analyze the electronic properties. Solar cells were fabricated and characterized under AM
5：5 illumination. Data Analysis Methods:
XPS and UPS spectra were analyzed to determine core level shifts and work function changes. Solar cell performance parameters (Voc, Jsc, FF, PCE) were measured and correlated with the electronic properties of the PEDOT:PSS/n-Si interfaces.
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