研究目的
Investigating the impact of p-type modulation doping on the performance of quantum dot lasers on silicon, including high temperature operation, dynamic performance, and device reliability.
研究成果
p-type modulation doping significantly enhances the performance of quantum dot lasers on silicon, enabling high temperature operation, improved reliability, and reduced sensitivity to optical feedback. Anomalous net gains observed suggest complex carrier dynamics that merit further investigation.
研究不足
The study is limited by the test setup's temperature range for gain analysis (20?C to 56?C) and the assumption of a logarithmic gain-current relationship in quantum dots, which may not hold under all conditions.
1：Experimental Design and Method Selection:
The study involves the growth of quantum dot lasers with varied p-modulation doping levels using molecular beam epitaxy on on-axis (001) GaP/Si substrates. The impact of doping on laser performance is analyzed through threshold current, slope efficiency, and output power measurements.
2：Sample Selection and Data Sources:
Lasers with unintentionally doped and p-modulation doped active regions are compared. Data includes continuous wave operation measurements and spectrally resolved gain analysis.
3：List of Experimental Equipment and Materials:
Molecular beam epitaxy for growth, standard dry etch and metal deposition techniques for device fabrication, and atomic layer deposition for passivation.
4：Experimental Procedures and Operational Workflow:
Devices are fabricated into deeply etched ridge lasers with two top-side contacts. Performance is measured under continuous wave operation at various temperatures.
5：Data Analysis Methods:
The study employs Andrekson’s method for gain analysis and logarithmic fitting of gain curves to extract modal gain coefficient and internal optical loss.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
