研究目的
Investigating the mechanism of organic solar cell performance degradation upon thermal annealing of MoOx, focusing on the formation of a strong dipole at the BHJ/MoO3 interface and its correlation with device performance.
研究成果
The study demonstrates that thermal annealing of MoOx in organic solar cells affects the chemical states of MoOx, the distribution of MoOx along the depth scale, and the dipole strength at the BHJ/MoO3 interface, which in turn influences device performance. Pre-annealing of the BHJ before MoOx deposition retains a strong interface dipole and improves device performance, while post-annealing leads to diffusion of MoOx into the BHJ, reducing the dipole strength and device efficiency.
研究不足
The study is limited to P3HT:PC61BM BHJ devices with MoO3 as the hole transport layer. The findings may not be directly applicable to other material systems or device architectures. The effect of lower annealing temperatures was not investigated.
1:Experimental Design and Method Selection:
The study focuses on P3HT:PC61BM bulk heterojunction (BHJ) devices with MoO3 at the hole extraction side. The influence of thermal annealing at different stages of device fabrication on the interface properties and device performance was investigated.
2:Sample Selection and Data Sources:
Samples were prepared from P3HT and PC61BM solved in 1,2-dichlorobenzene(o-DCB):chlorobenzene (30:70 wt%). The material concentration in solutions was 3 wt%.
3:List of Experimental Equipment and Materials:
X-ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Neutral Impact Collision Ion Scattering Spectroscopy (NICISS), and Inverse Photoelectron Spectroscopy (IPES) were used.
4:Experimental Procedures and Operational Workflow:
Samples were spin-coated on low-resistance As-doped Si wafers, heated at 80 oC for 10 min to ensure complete solvent removal, and annealed at 170 oC for 10 min under UHV conditions. MoO3 was evaporated at 535 oC under high vacuum.
5:Data Analysis Methods:
The strength of the dipole at the BHJ/MoO3 interface was analyzed using UPS and SVD algorithm. The performance of organic photovoltaic devices was correlated with the interface properties.
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