研究目的
Investigating the formation of SiC from C and Si using laser sintering, and analyzing the microstructures and crystalline phases of the RS-SiC.
研究成果
The study demonstrated that reaction sintering of SiC using a Nd:YAG laser can form a dense SiC layer with grain sizes varying from 100–500 nm to 1–3 μm depending on the laser power. The crystalline phases of SiC were identified as the β phase at lower laser powers and α-SiC at higher laser powers.
研究不足
The study found that a single laser scan is insufficient to completely form SiC, and the reaction was only complete after five laser scans. The laser penetrated only several micrometers from the surface, leaving the powder mixture underneath unchanged.
1：Experimental Design and Method Selection:
The study used a continuous-wave Nd:YAG laser to irradiate pellets of a stoichiometric powder mixture of Si and C under Ar gas flow.
2：Sample Selection and Data Sources:
Reagent-grade Si and C powders were used as starting materials.
3：List of Experimental Equipment and Materials:
A continuous-wave Nd:YAG laser, FE-SEM (SU-8000, HITACHI), and XRD (RINT-2000, Rigaku) were used.
4：Experimental Procedures and Operational Workflow:
The pellet was irradiated by the laser under a flow of Ar, and the laser scanned the entire surface of the pellet using a Galvano-mirror.
5：Data Analysis Methods:
Microstructures were observed by FE-SEM, and crystalline phases were analyzed by XRD.
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