1：Experimental Design and Method Selection:

The phase shifters are constructed using a p-i-n junction structure with the p- and n-doped regions formed on both sides of the i-region. The i-region width of the phase shifter is optimized considering the power consumption for phase-tuning and the propagation loss in the phase shifter.

2：Sample Selection and Data Sources:

The OPA was fabricated on an 8-inch SOI wafer with a top silicon layer of 220 nm and a buried oxide layer of 2 μm, using CMOS compatible processes.

3：List of Experimental Equipment and Materials:

A KrF scanner with a 248 nm wavelength laser was used for the photolithography.

4：Experimental Procedures and Operational Workflow:

The electrical characteristics of the phase shifter were analyzed with Mach-Zehnder interferometer (MZI) test devices.

5：Data Analysis Methods:

The phase-tuning power and optical loss of the p-i-n phase shifter were analyzed with respect to the i-region width.