研究目的
Demonstrating InP-based buried grating coupled surface-emitting distributed feedback (DFB) lasers designed to operate at a wavelength of 2004 nm.
研究成果
In conclusion, we have demonstrated CW operation of surface emitting InP-based InGaAsSb/InGaAs QWs laser. The emission wavelength can be adjusted from 2002.7 to 2006 nm with a temperature-tuning rate of 0.11 nm/K. High side-mode suppression ratio (SMSR) is achieved with at least 35 dB under all injection currents and temperature conditions. At 10 °C, a total CW output power as high as 30 mW has been achieved. A single lobed surface-emitting far-field radiation pattern with a low divergence angle of about 0.22° × 8.9° is observed, which proves that the designed grating is reasonable and effective.
研究不足
The laser’s output power reduced to a few mW at 40 °C. This may be ascribed to the enhanced Auger recombination and more hot carriers escaping from the QWs at higher temperatures.
1：Experimental Design and Method Selection:
The laser structure consists of three InGaAsSb/InGaAs QWs, with a 5 μm-wide double-channel ridge waveguide. A second-order semiconductor/semiconductor grating is used for in-plane feedback and vertical out-coupling.
2：Sample Selection and Data Sources:
The laser structures were grown on 2-inch. S-doped InP substrates using an Aixtron close coupled showerhead (CCS) 3×2 Flip-Top metal organic chemical vapor deposition (MOCVD) system.
3：List of Experimental Equipment and Materials:
Aixtron close coupled showerhead (CCS) 3×2 Flip-Top metal organic chemical vapor deposition (MOCVD) system, scanning electron microscopy (SEM), Plasma Enhanced Chemical Vapor Deposition (PECVD), long wavelength optical spectrum analyzer.
4：Experimental Procedures and Operational Workflow:
The second order grating with a period gΛ =628 nm was fabricated on the upper InGaAsP confining layer. After regrowth, the wafer was patterned by photolithography and wet-etching into double-channel ridge waveguide lasers with an average core width of 5 μm.
5：Data Analysis Methods:
The spectra were measured by a long wavelength optical spectrum analyzer with a resolution of 0.02 nm.
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