研究目的
Investigating the development of a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength.
研究成果
A UV-C LD fabricated on a single-crystal AlN substrate operating at room temperature was demonstrated. Lasing was achieved at a wavelength of 271.8 nm under pulse current injection above the threshold current (0.4 A), with a remarkably low operating voltage of 13.8 V at the threshold current.
研究不足
The development of a UV-C LD requires the development of thick, low absorption AlGaN layers with high Al-content for optical confinement, which is particularly difficult for hole transport due to decreasing hole conductivity with increasing Al content.
1：Experimental Design and Method Selection:
The laser structure was grown on a (0001)-orientated, high-quality, 2-inch single-crystal AlN substrate using the metal organic chemical vapor deposition method. A distributed polarization doping (DPD) structure was employed as the p-side to achieve low internal loss, high hole conductivity, and high hole injection.
2：Sample Selection and Data Sources:
The AlN substrate was provided by Crystal IS with a dislocation density of 103 ~ 104 cm?
3：List of Experimental Equipment and Materials:
The fabricated device structure included a
4：4 μm AlN regrowth, a 35 μm n-type Al7Ga3N:
Si as the n-side cladding, a 9.0 nm single quantum well layer emitting at 270 nm, and a 0.32 μm thick AlxGa1-xN DPD layer.
5：0 nm single quantum well layer emitting at 270 nm, and a 32 μm thick AlxGa1-xN DPD layer.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The LD structure was partially etched to expose the n-type layer and shaped a 4 μm-width ridge stripe along the <1-100> direction. SiO2 was deposited as a passivation layer, followed by electrode formation.
6：Data Analysis Methods:
The electrical characteristics of the LD were measured under a 50 ns pulsed current injection. The edge emission was measured simultaneously with a photon multimeter and a spectrometer.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
