研究目的
Investigating the development of high-performance broadband photodetectors using PbS colloidal quantum dots passivated by thiocyanate anion (SCN-) combined with perovskite (CH3NH3PbI3) for UV-vis-NIR broadband imaging applications.
研究成果
The PbS-SCN/CH3NH3PbI3 composite photodetectors exhibit a wide spectral response from 365 to 1550 nm, with high responsivities and detectivities, and fast photo-response. A 10×10 broadband photodetector array was achieved, showing potential in broadband photosensitive imaging applications. The work highlights a promising strategy for the development of high-performance broadband photodetectors.
研究不足
The imaging performance in the NIR region is not as good as that in the UV-vis region due to the relatively weak photoresponse. The response speed and dark current should be further improved for commercialized applications.
1：Experimental Design and Method Selection:
The PbS CQD film was prepared on the SiO2/Si substrate by layer-by-layer spin-coating, and the ligand exchange process was carried out after the spin-coating of each layer by solid-state ligand exchange method. Four short-chain ligands were introduced to exchange the long oleic acid (OA) ligands of the CQDs. The CH3NH3PbI3 film was deposited on PbS CQD films by a one-step antisolvent method, followed by thermal evaporation of 50-nm-thick Au electrodes.
2：Sample Selection and Data Sources:
The samples used were PbS CQDs passivated with different short-chain ligands (SCN-, MPA, TBAI, EDT) and CH3NH3PbI3 perovskite.
3：List of Experimental Equipment and Materials:
TEM (FEI Tecnai G2-F20), XRD (PANalytical Empyrean), SEM (Carl Zeiss), spectrophotometer (Perkin Elmer Lambda 750), spectrofluorometer (Horiba Scientific FluoroMax-4), UPS (Kratos AXIS Ultra DLD), semiconductor parameter analyzer (Keithley 4200), high-vacuum probe station (Lake Shore).
4：Experimental Procedures and Operational Workflow:
The PbS CQD films were prepared by the layer-by-layer method, followed by ligand exchange and perovskite deposition. The devices were characterized for their photodetection performance.
5：Data Analysis Methods:
The photodetection performances were measured and analyzed using a semiconductor parameter analyzer connected to a high-vacuum probe station.
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XRD
PANalytical Empyrean
PANalytical
Characterization of the crystalline structure of the films.
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SEM
Carl Zeiss
Carl Zeiss
Characterization of the surface morphology of the films.
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Spectrophotometer
Perkin Elmer Lambda 750
Perkin Elmer
Measurement of the absorption spectra of the films.
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UPS
Kratos AXIS Ultra DLD
Kratos
Measurement of the valence band edges of the PbS CQDs.
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Semiconductor Parameter Analyzer
Keithley 4200
Keithley
Measurement of the photodetection performances of the devices.
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High-Vacuum Probe Station
Lake Shore
Lake Shore
Connection to the semiconductor parameter analyzer for measurements.
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TEM
FEI Tecnai G2-F20
FEI
Characterization of the size and lattice spacing of the PbS CQDs.
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Spectrofluorometer
Horiba Scientific FluoroMax-4
Horiba Scientific
Recording of the steady-state PL spectra.
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