研究目的
Investigating the electroluminescence properties of GeSn/SiGeSn heterostructures LEDs versus temperature and showing the importance of having a direct band-gap active material with the highest splitting energy possible between the Γ- and the L valleys and SiGeSn barriers.
研究成果
The study demonstrated a factor 2 increase in electroluminescence with a Ge0.84Sn0.16 active layer compared to a Ge0.87Sn0.13 one, highlighting the importance of a high splitting energy between the Γ and L valleys. Activation energies of defects inducing non-radiative recombination processes were found to be close to 20 meV regardless of the tin concentration.
研究不足
The study is limited by the technical constraints of the RPCVD growth process and the fabrication of mesa-LEDs. The comparison of EL intensities between different Sn content LEDs was not possible due to different detection setups.
1：Experimental Design and Method Selection:
The study involved growing vertical GeSn LEDs with varying Sn contents and with or without SiGeSn barriers using Reduced Pressure Chemical Vapor Deposition (RPCVD).
2：Sample Selection and Data Sources:
GeSn and SiGeSn alloys were grown on Ge Strain Relaxed Buffers (SRBs) with Sn contents ranging from 6% to 16%.
3：6%. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: A 200 mm Epi Centura 5200 RPCVD tool with Ge2H6, Si2H6 and SnCl4 as precursors was used.
4：Experimental Procedures and Operational Workflow:
Several p-i-n junction configurations were grown, and mesa-LEDs were fabricated using lithography and dry-etching.
5：Data Analysis Methods:
Electroluminescence signals were collected and analyzed using a monochromator and photodetectors, with data recorded using a lock-in amplifier.
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