摘要： In this study, we demonstrated the feasibility of using tetrahedral amorphous carbon (ta-C) films coated through the filtered cathodic vacuum arc (FCVA) process as a hole transport layer (HTL) for perovskite solar cells (PSCs) and quantum dots light-emitting diodes (QDLEDs). The p-type ta-C film has several remarkable features, including ease of fabrication without the need for thermal annealing or any other post-treatment, reasonable electrical conductivity, optical transmittance, good chemical stability, and a high work function. Therefore, we present a simple and effective method to improve the performance of PSCs and QDLEDs by applying ta-C films as a HTL. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy examinations show that the electrical properties (sp3/sp2 hybridized bond) and work function of the ta-C HTL are appropriate for PSCs and QDLEDs. In addition, in order to correlate the performance of the devices, the optical, surface morphological, and structural properties of the FCVA-grown ta-C films with different thicknesses (5 ~ 20 nm) deposited on the ITO anode are investigated in detail. The optimized ta-C film with a thickness of 5 nm deposited on the ITO anode had a sheet resistance 10.33 Ohm/square, a resistivity of 1.34 × 10-4 Ohm-cm, and an optical transmittance of 88.97%. Compared to the reference PSC with p-NiO HTL, the PSC with 5 nm thick ta-C HTL yielded a higher power conversion efficiency (PCE, 10.53%) due to its improved fill factor. Further, performance of QDLEDs with 5 nm thick ta-C hole injection layers (HIL) showed better than performance of QDLEDs with different ta-C thicknesses. It is concluded that FCVA grown ta-C films have the potential to serve as HTL and HIL in next-generation PSCs and QDLEDs.