研究目的
Investigating the effect of indium doping on the structural, optical, and electrical properties of tin oxide thin films and their application as photoanodes in organic solar cells.
研究成果
The study successfully prepared highly transparent and conducting SnO2 and In-doped SnO2 thin films using spray technique. The resistivity of the films increased with indium doping due to enhanced ionized mobility scattering. When used as photoanodes in organic solar cells, the undoped SnO2-based device showed a higher efficiency (1.06%) compared to the In-doped SnO2-based device (0.56%), attributed to the decreased conductivity of the photoanode with doping.
研究不足
The study notes that the resistivity of SnO2:In films increases with indium doping concentration, which could limit their application in devices requiring high conductivity. The efficiency of organic solar cells using these films was also observed to decrease with doping.
1：Experimental Design and Method Selection:
The study involved the preparation of undoped and indium-doped tin oxide (SnO2:In) thin films using a spray deposition technique. The effect of indium doping concentration on the films' properties was investigated.
2：Sample Selection and Data Sources:
Corning glass substrates were used for the deposition of SnO2:In thin films. The films were characterized using XRD, AFM, UV-Vis spectroscopy, and Hall measurement system.
3：List of Experimental Equipment and Materials:
A homemade spray chamber, syringe pump, nitrogen gas, heater, and various chemicals including tin tetrachloride and indium chloride were used.
4：Experimental Procedures and Operational Workflow:
The spray solution was prepared and deposited on pre-cleaned glass substrates at 450°C. The films were then used to fabricate organic solar cells with a configuration of SnO2:In/PEDOT:PSS/P3HT:PCBM/Al.
5：Data Analysis Methods:
The structural, optical, and electrical properties of the films were analyzed using XRD, AFM, UV-Vis spectroscopy, and Hall measurement system. The performance of the solar cells was evaluated using current density-voltage (J-V) characteristics.
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