研究目的
To develop a low temperature (≤150oC) preparation method of high quality CsPbI3/CsPbI2Br all-inorganic perovskite film which can greatly decrease fabrication cost and complexity.
研究成果
Doping CsAc in CsPbI2Br successfully realizes efficient and stable inorganic CsPbI2Br-based perovskite solar cells at a low temperature of 150oC. The optimal doping concentration (10% CsAc) results in high crystallinity, reduced defect states, and enhanced charge transport, leading to a PCE of 10.53%. The study provides a viable method for low-temperature preparation of high-performance perovskite solar cells.
研究不足
The study focuses on CsPbI2Br films and may not be directly applicable to other perovskite compositions. The long-term stability beyond 480 hours was not fully explored.
1：Experimental Design and Method Selection:
The study involves doping CH3COOCs (CsAc) into CsPbI2Br precursor solution to fabricate a planar structure solar cell at a low temperature of 150oC.
2：Sample Selection and Data Sources:
CsPbI2Br films with different concentrations of CsAc (0%, 5%, 10%,
3：5%) were prepared and analyzed. List of Experimental Equipment and Materials:
Scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and other standard laboratory equipment were used.
4：Experimental Procedures and Operational Workflow:
Films were annealed at 150oC, and their phase stability, crystallinity, and photovoltaic performance were evaluated.
5：Data Analysis Methods:
XRD for phase analysis, SEM for morphology, EDS for elemental analysis, and photovoltaic measurements for device performance.
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