研究目的
Investigating the performance of ultraviolet (UV) photodetectors based on doped ZnO films fabricated using a low-cost sol-gel spin coating process.
研究成果
The ZnO p-n photodetector fabricated using a low-cost sol-gel processing method demonstrated effective UV detection with a photosensitivity of 10.9, photoresponsivity of 2.1 × 10-2 AW-1, and photoconductive gain of 7.2 × 10-2 at 5 V reverse bias.
研究不足
The study acknowledges the challenges in achieving reliable p-type conductivity in ZnO and the reproducibility issues in device performance due to the fabrication process.
1：Experimental Design and Method Selection:
The study employed a sol-gel spin coating process for the growth of n-type gallium-doped ZnO (ZnO:Ga) and p-type nitrogen-doped ZnO (ZnO:N) films on ITO coated glass.
2：Sample Selection and Data Sources:
The samples were prepared using zinc acetate dihydrate as a precursor, isopropanol as a solvent, and monoethanolamine as a stabilizer.
3：List of Experimental Equipment and Materials:
A surface profilometer was used to measure film thickness, and an I-V measurement system was used for electrical characterization.
4：Experimental Procedures and Operational Workflow:
The fabrication involved spin coating and curing on a hot-plate, repeated to achieve desired thickness, followed by annealing and wet etching.
5：Data Analysis Methods:
The performance was evaluated based on I-V characteristics, photosensitivity, photoresponsivity, and photoconductive gain.
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