研究目的
Investigating the characteristics of a megapixel matrix photodetector of the middle infrared range made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer.
研究成果
The parameters of a domestic megapixel photodetector of the mid-infrared range, made in the form of a hybrid chip consisting of a semiconductor HgCdTe matrix on a silicon substrate and a silicon multiplexer chip were presented. The high sensitivity and the uniformity of the sensitivity of the elements of the FPA module allows it to be used as part of diagnostic equipment, for example, in infrared telescopes for observing distant celestial bodies.
研究不足
The measurements did not take the loss of the useful photosignal due to the reflection from the optical window of the cryostat into account or the reflection from the carrier silicon substrate, on which antireflection coating was not applied.
1：Experimental Design and Method Selection:
The study involved the analysis of a hybrid chip consisting of a semiconductor HgCdTe matrix on a silicon substrate and a silicon multiplexer chip. The temperature dependence of the reverse current of elements was measured in the 125–300 K range.
2：Sample Selection and Data Sources:
The IR matrix was made on a heteroepitaxial structure of Hg1 – xCdxTe/Si (310), grown in the 'Ob' multichamber ultrahigh vacuum molecular beam epitaxy installation.
3：List of Experimental Equipment and Materials:
The KEITHLEY 6517B electrometer was used for current-voltage characteristics measurements.
4：Experimental Procedures and Operational Workflow:
The elements of the matrix were connected to the individual storage capacitors of the silicon multiplexer through indium columns. Measurements were taken under irradiation from an absolute black body simulator (ABS) with a cavity temperature of 573 K.
5：Data Analysis Methods:
The theoretical dependence was calculated using the one-dimensional diffusion-drift model.
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