摘要： Few-to-monolayer germanium selenide, a new Ⅳ-Ⅵ group layered material recently fabricated by mechanical exfoliation and subsequent laser thinning, is promising in very fast and broadband optoelectronic applications for its excellent stability, natural p-type semiconductor, complicated band structures, and inert surface properties. However, large-scale production of such few-layer GeSe devices with superior performance is still in early stages. In this study, field-effect transistors (FETs) made of few-layer GeSe with direct bandgaps are fabricated. Transistor performance with Schottky contact characteristics is measured at room temperature. Field effect mobility of 4 cm2/Vs and drain currents modulated both in hole and electrons are measured. Photoresponse as a function of the illumination wavelength, power, and frequency are characterized. The few-layer GeSe transistor shows photoresponse to the illumination wavelengths from the visible up to 1400 nm, and photoresponse rise (fall) time of 13 μs (19 μs), demonstrating very broadband and fast detection. The ambipolar behavior and the photoresponse characteristics demonstrate great potential of few-layer GeSe for applications in high stability, very fast and broadband of optoelectronic devices.