摘要： We present the results achieved with an optical zone melting recrystallization (ZMR) system, which concentrates the radiation of two halogen lamps on the surface of a microcrystalline silicon (μc-Si) ribbon sample, creating a long, 2 mm width molten region (~1414o C). μc-Si ribbon samples measuring up to 25×100 mm2 were previously obtained using an inline optical chemical vapor deposition (CVD) system, that grows silicon layers on top of a silicon dust substrate. Inside the ZMR system, the μc-Si ribbon sample is recrystallized in an argon atmosphere and using a step motor to pull the ribbon at a constant speed between 1 to 6 mm/min, the molten zone travels along the ribbon, recrystallizing the whole sample into a multi-crystalline silicon (mc-Si) ribbon, with an average crystal size in the [1; 10] mm range. It was observed that the physical characteristics of the μc-Si ribbon, like powder substrate incorporation, porosity, thickness, powder grain size used as substrate in the CVD step, have a crucial influence on the recrystallization process and on the electrical properties of the mc-Si ribbon obtained after the ZMR process. Lifetime measurements performed on the recrystallized samples suggest that improvements regarding crystalline quality and possible presence of impurities need to be addressed.