研究目的
To suppress the dark current in ZnO nanowire photodetectors by introducing a thin layer of poly(2-vinyl naphthalene) (PVN) between the ZnO nanowire and gate dielectric, thereby enhancing the photodetector's performance.
研究成果
The introduction of a PVN thin layer between the ZnO nanowire and gate dielectric effectively suppresses the dark current, leading to high-performance photodetectors with a large Ilight/Idark ratio, high photoresponsivity, and ultrahigh detectivity. This approach offers a new strategy for designing high-performance photodetectors based on functional nanomaterials.
研究不足
The study is limited by the minimum steady output of the UV light source used, which affects the measurement of photoconductive gain at very low power densities. Additionally, the method's applicability to other semiconducting materials needs further exploration.
1：Experimental Design and Method Selection:
A thin PVN film was introduced between the ZnO nanowire and gate dielectric to function as a charge trapping layer. The device's electrical and optoelectrical measurements were carried out at room temperature.
2：Sample Selection and Data Sources:
ZnO nanowires were purchased and dispersed ultrasonically in ethanol. PVN solution was prepared by dissolving PVN into toluene.
3：List of Experimental Equipment and Materials:
SEM (Carl Zeiss G500), AFM (Cypher S), XRD (Empyrean), spectrophotometer (Perkin Elmer), Keithley 4200 sourcemeter, and a light-emitting diode illuminant system (CEAULIGHT).
4：Experimental Procedures and Operational Workflow:
The PVN thin film was prepared by spin-coating, followed by annealing. ZnO nanowires were dispersed on PVN, and Au electrodes were deposited by thermal evaporation.
5：Data Analysis Methods:
The photoconductive gain, responsivity, and detectivity of the ZnO nanowire photodetector were extracted and analyzed.
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