研究目的
To theoretically investigate the transport property of electrons in a spin-diode structure consisting of a single quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one half-metallic ferromagnet (HFM) leads, focusing on the control over the tunneling current by electrical methods.
研究成果
The research demonstrates a clear asymmetry in the electron current as a function of bias voltage in a QD junction with one HFM and one NM lead, attributed to spin-dependent tunneling rates. The rectification effect can be tuned and even reversed by adjusting the QD's energy level via the gate voltage. The device's performance is robust against temperature variations and small external magnetic fields, making it a promising candidate for applications in molecular spintronics and quantum information processing.
研究不足
The study is theoretical and relies on the assumption of weak coupling between the QD and the leads. The practical realization of the proposed device depends on the availability of materials with high spin polarization, such as half-metallic ferromagnets. The effects of temperature and external magnetic fields on the device's performance are also discussed as potential limitations.
