研究目的
Investigating a resist-less patterning method of Al thin ?lm on silicone hard-coated polycarbonate by 157 nm F2 laser irradiation for the manufacturing of electrodes for smart polycarbonate windows.
研究成果
The resist-less patterning method using F2 laser irradiation successfully patterns Al thin ?lm on polycarbonate by forming Al2O3 on the surface and Al-O-Si bonds at the interface, providing abrasion resistance and strong adhesion. This method is promising for manufacturing electrodes on smart polycarbonate windows.
研究不足
The study is limited to the use of F2 laser for patterning and does not explore other laser wavelengths or patterning methods. The process window is examined up to 110 nm thickness of Al ?lm, but the upper limit is not fully explored.
1：Experimental Design and Method Selection:
The study involves the use of 157 nm F2 laser irradiation for patterning Al thin ?lm on silicone hard-coated polycarbonate. A photomask is used to define the pattern, and chemical etching with KOH aq. is employed to remove the non-irradiated areas.
2：Sample Selection and Data Sources:
Al thin ?lm was deposited on silicone hard coated PC chip by vacuum evaporation. The thickness of the Al ?lm varied from 20 to 110 nm.
3：List of Experimental Equipment and Materials:
Equipment includes a 157 nm F2 laser (LPF pro; Coherent), X-ray photoelectron spectrometer (KRATOS ULTRA2; Shimadzu), ATR-FTIR spectrophotometer (FT/IR-610; JASCO), AFM (Artray; ARTCAM-300MI-HHS-WOM), and a stylus-type surface pro?lometer (Vecco; DEKTAK3). Materials include 99.999% purity Al wire (Newmet) and KOH (Wako).
4：3). Materials include 999% purity Al wire (Newmet) and KOH (Wako). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The Al thin ?lm on PC was irradiated through a photomask with F2 laser, followed by chemical etching with KOH aq. to remove non-irradiated areas. The chemical bonding and surface morphology were then analyzed.
5：Data Analysis Methods:
XPS and ATR-FTIR measurements were used to examine the chemical bonding of the Al thin ?lm and PC chip. AFM was used to examine surface morphology.
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F2 laser
LPF pro
Coherent
Used for patterning Al thin ?lm on polycarbonate by irradiation.
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X-ray photoelectron spectrometer
KRATOS ULTRA2
Shimadzu
Used to examine the chemical bonding of the Al thin ?lm and PC chip.
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ATR-FTIR spectrophotometer
FT/IR-610
JASCO
Used to examine the chemical bonding of the Al thin ?lm and PC chip.
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AFM
ARTCAM-300MI-HHS-WOM
Artray
Used to examine surface morphology.
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Stylus-type surface pro?lometer
DEKTAK3
Vecco
Used to measure the thickness of Al thin ?lm.
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Al wire
99.999% purity
Newmet
Used for vacuum evaporation to deposit Al thin ?lm on PC chip.
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KOH
Wako
Used for chemical etching to remove non-irradiated areas of Al thin ?lm.
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