研究目的
To synthesize heavily nitrogen (N) and phosphorus (P) co-doped graphene (n-type graphene) by chemical vapor deposition (CVD) for high-performance microelectronic devices.
研究成果
A simple and environmentally friendly method for synthesizing heavily n-type doped graphene was developed, showing high performance in photodetector applications with high detectivity and responsivity at 1550 nm wavelength.
研究不足
The study focuses on monolayer graphene synthesis and may not directly apply to multilayer graphene systems. The doping process's scalability and uniformity over large areas need further investigation.
1：Experimental Design and Method Selection:
Utilized N and P co-doped graphene quantum dots (n-type GQDs) as nucleation centers, methane (CH4) as the gaseous carbon reservoir, and copper (Cu) foils as the catalyst substrate for CVD synthesis of n-type graphene.
2：Sample Selection and Data Sources:
Used a
3：8% pure Cu foil, mechanically and electrochemically polished, and annealed at 1000 °C under hydrogen flow. List of Experimental Equipment and Materials:
Cu foil (Alfa Aesar, 125 μm thick), n-type GQDs, CH4, H2, Ar.
4：Experimental Procedures and Operational Workflow:
Spin-coated n-type GQDs on Cu foil, annealed in H2 and Ar mixture, introduced CH4 precursor for graphene growth.
5：Data Analysis Methods:
Characterized by TEM, HR-TEM, Raman spectroscopy, AFM, XPS, and electrical measurements.
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