研究目的
Demonstrating the integration of an amorphous silicon photodetector with a thin film lithium niobate photonic platform operating in the visible wavelength range.
研究成果
The integration of an amorphous silicon photodetector with a lithium niobate photonic platform at visible wavelengths has been demonstrated, with a responsivity of 37 mA/W at 850 nm wavelength. The operating bandwidth was measured to be 10 MHz. The high spectral selectivity of the integrated photonic device makes it a good candidate for detection and sensing applications.
研究不足
The operating bandwidth of the integrated photodetector was measured to be 10 MHz, limited by the transimpedance amplifier used. The responsivity of the a-Si detector is about an order of magnitude lower than commercial Si and InGaAs detectors.
1：Experimental Design and Method Selection:
The study involved the design, fabrication, and integration of a metal-semiconductor-metal photodetector with a thin film lithium niobate photonic platform.
2：Sample Selection and Data Sources:
The devices were fabricated on LN-on-insulator (LNOI) chips with a 300 nm X-cut LN layer on top of the 2-μm thick thermally grown silicon dioxide layer.
3：List of Experimental Equipment and Materials:
Electron beam lithography tool (Elionix), Ar+ plasma based reactive ion etching (RIE) tool, plasma-enhanced chemical vapor deposition (PECVD) tool, rapid thermal processing (RTP), scanning electron microscopy (SEM), tunable new focus velocity laser, lensed fiber with 1 μm spot size (Oz Optics), SMU Keithley 2400, M2 SolsTis tunable laser, transimpedance amplifier (TIA) (AD848830), vector network analyzer (VNA), commercial photodetector (PDA36A, Thorlabs).
4：Experimental Procedures and Operational Workflow:
The photonic structures were defined in electron-beam resist, transferred into the LN layer by RIE, covered by a silicon dioxide layer, detector areas were opened, a-Si absorption layer was deposited, patterned, and gold electrodes were formed.
5：Data Analysis Methods:
The responsivity of the photodetector was measured, and the temporal-response was evaluated by directly modulating the tunable laser.
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lensed fiber
1 μm spot size
Oz Optics
End-fire coupling technique.
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commercial photodetector
PDA36A
Thorlabs
Detecting the remaining optical energy transmitted through the photodetector.
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electron beam lithography tool
Elionix
Defining the photonic structures in electron-beam resist.
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reactive ion etching tool
RIE
Transferring the pattern into the LN layer.
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plasma-enhanced chemical vapor deposition tool
PECVD
Depositing a silicon dioxide layer and the a-Si absorption layer.
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rapid thermal processing
RTP
Annealing the a-Si layer.
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tunable new focus velocity laser
Coupling TE polarized 635 nm light into the waveguide.
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SMU Keithley 2400
Keithley
Measuring an I-V characteristic of the integrated photodetector.
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M2 SolsTis tunable laser
Measuring a responsivity of the photodetector as a function of a wavelength.
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transimpedance amplifier
AD848830
Amplifying the detected electrical signal from the photodetector.
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vector network analyzer
VNA
Measuring the electro-optical bandwidth of the detector.
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