研究目的
Investigating the feasibility of fabricating Ge double quantum dots (DQDs) with high symmetry and tunability in size and inter-dot spacing for quantum computing applications.
研究成果
The study successfully demonstrates the fabrication of spherical-shaped Ge DQDs with tunable sizes and controllable inter-dot spacings using CMOS nano-spacer technology and selective oxidation of SiGe. The approach achieves high symmetry in QD sizes and shapes, and tunable inter-QD spacing, making it promising for quantum computing applications.
研究不足
The study is limited by the precision of lithographic patterning and the thermal oxidation process, which may affect the uniformity and placement accuracy of the Ge QDs.
1：Experimental Design and Method Selection:
The study employs CMOS nano-spacer technology and self-assembly growth techniques to fabricate Ge DQDs.
2：Sample Selection and Data Sources:
The fabrication starts with LPCVD deposition of a Si3N4 layer over Si substrates, followed by nano-patterning of Si3N4 ridges.
3：List of Experimental Equipment and Materials:
Includes electron-beam lithography, CHF3 plasma etching, LPCVD poly-Si
4：85Ge15 deposition, SF6/C4F8 plasma process, and thermal oxidation at 900oC. Experimental Procedures and Operational Workflow:
Detailed steps involve patterning Si3N4 ridges, depositing and etching back poly-SiGe spacer layers, and thermal oxidation to form Ge QDs.
5：Data Analysis Methods:
EDX and TEM micrographs are used to analyze the size, shape, and spacing of the Ge QDs.
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