研究目的
To overcome the limitation of achieving a spatially uniform multiplication with fine pad pixelation in Low-Gain Avalanche Diodes (LGADs) by introducing the AC-coupled LGAD approach.
研究成果
The AC-LGAD prototypes show good electrical characteristics, a gain value comparable to standard LGADs, and a timing resolution associated to the detector jitter that reaches approximately 20 ps. Further optimization is expected to allow higher operational bias voltage, faster timing performance, and finer spatial resolution.
研究不足
The study mentions the need for further optimization of the fabrication process to increase the breakdown voltage by fine-tuning the gain layer implantation parameters, the resistance of the n+ layer, and the granularity of the pixelation.
1：Experimental Design and Method Selection:
The study leverages the fabrication of standard LGADs to develop and fabricate AC-LGADs, focusing on the design and fabrication process differences between the two.
2：Sample Selection and Data Sources:
Prototypes of AC-LGAD sensors are designed and fabricated at Brookhaven National Laboratory (BNL).
3：List of Experimental Equipment and Materials:
The process involves photolithographic masks, n+ and n++ implants, and a 100-nm thickness of PECVD silicon nitride.
4：Experimental Procedures and Operational Workflow:
The performance of AC-LGAD structures is measured alongside LGADs and diodes fabricated on the same wafer, including static electrical performance, gain, induced signal, cross-talk between pixels, and timing.
5：Data Analysis Methods:
The study includes measurements of junction capacitance as a function of bias voltage, gain characterization using a Transimpedance Amplifier (TA), and timing resolution calculation based on sensor noise and signal slew rate.
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