摘要： The work investigates the role of composition grading of amorphous silicon germanium alloy on single junction graded band gap amorphous silicon solar cells, for the first time. The fabrication and optical characterization of composition graded aSi1-xGex: H alloy by varying the gas flow rate of germane (GeH4) are presented. We propose the composition graded p+aSi1-xGex: H layer to be considered as one of the active layers in amorphous silicon based solar cells. The principle of operation of the solar cell is illustrated with the energy band diagram of proposed n+aSi:H/i-aSi:H/p+aSi1-xGex:H solar cell structure. Further, the behavior of the structure is evaluated through simulation in terms of proposed layer thickness variation and temperature variation. It is observed that the proposed structure is capable of delivering an open circuit voltage (V oc), short circuit current density (Jsc), Fill Factor (FF) and conversion efficiency (g) of 1.1 V, 15.56 mA/cm2, 0.885 and 15.19% respectively, which is at par with any other single junction amorphous silicon solar cells. The cell performance parameters were compared with related state of the art as well as our previous works. The performance parameters of proposed structure show that it is better to use a single composition graded layer instead of using a number of non-graded composition layers in photovoltaic structures, which reduces complexity and cost of fabrication.