研究目的
To develop a mathematical model for simulation of optical and functional characteristics of InAs/GaAs heterointerfaces with one layer of InAs quantum dots and compare the simulated results with experimental data.
研究成果
The developed model successfully simulated the optical and functional characteristics of InAs/GaAs heterointerfaces with one layer of InAs quantum dots. A red shift of the experimental peak by 65 meV was observed, indicating size variance in quantum dots. The measured dark current density was one order of magnitude higher than the simulated value, suggesting the presence of stressful defects and external influences. The asymmetry in dark current curves at positive and negative bias was attributed to larger quantum dots.
研究不足
The model assumes a uniform size of quantum dots and does not account for the heterogeneity of deformation effects, Coulomb interaction of electrons in discrete bands, and valence-band splitting into heavy and light holes. Additionally, thermal components affecting the photoluminescence spectrum were not considered.
1：Experimental Design and Method Selection:
The study involved the development of a mathematical model to simulate the optical and functional characteristics of InAs/GaAs heterointerfaces with one layer of InAs quantum dots. The model was based on the solution of the Poisson and Schroedinger equations, considering the influence of elastic deformation on the effective masses of charge carriers.
2：Sample Selection and Data Sources:
The substrate material was unalloyed GaAs (100), followed by a conductive layer of the same material doped with Te. The quantum dots layer was located on the InAs wetting layer with a thickness of 3 monolayers.
3：List of Experimental Equipment and Materials:
The study used a substrate of unalloyed GaAs (100), conductive layer of GaAs doped with Te, InAs wetting layer, and InAs quantum dots.
4：Experimental Procedures and Operational Workflow:
The modeling process included the calculation of the deformation effect, the solution of the Poisson and Schroedinger equations, and the simulation of photoluminescence spectra and radiation conversion efficiency.
5：Data Analysis Methods:
The analysis involved comparing the simulated photoluminescence spectra and current-voltage characteristics with experimental data to validate the model.
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