研究目的
Investigating the terahertz radiation properties of a photoconductive antenna fabricated on GaAs-on-sapphire substrate and comparing its performance with a commercial antenna fabricated on low-temperature-grown GaAs.
研究成果
The GoS-based PCA demonstrated enhanced THz radiation compared to the LT-GaAs-based PCA, attributed to the larger mobility of carriers in the GaAs layer on sapphire. This indicates that GoS could be a promising photoconductive material for THz applications, especially where backside illumination is required.
研究不足
The study was limited by the radiation bandwidth of the metallic structure, which did not allow for a distinct difference in THz bandwidth between the two PCAs to be observed. Future studies could explore PCAs with different structures to study the performance of GoS in a broader THz band.
1：Experimental Design and Method Selection:
The study involved the fabrication of a photoconductive antenna on a GaAs-on-sapphire substrate using molecular beam epitaxy and photolithography. The performance was evaluated using a THz time-domain spectrometer.
2：Sample Selection and Data Sources:
The samples included a PCA fabricated on GoS and a commercial PCA fabricated on LT-GaAs. Data was collected using an in-house built THz-TDS setup.
3：List of Experimental Equipment and Materials:
MBE equipment (Riber 32), Ti:sapphire femtosecond laser (Micra 5, Coherent, Inc.), lock-in amplifier (SR850, Stanford Research Systems), and commercial PCAs (BATOP GmbH).
4：Experimental Procedures and Operational Workflow:
The PCAs were tested under various laser powers and DC bias voltages. The THz radiation was measured and compared between the two types of PCAs.
5：Data Analysis Methods:
The data was analyzed using the scaling rule to understand the relationship between the THz field strength and the laser power and bias voltage.
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