研究目的
To propose and evaluate a heterostructure based on graphene and black phosphorus layers for achieving negative dynamic conductivity in the terahertz frequency range, enabling the amplification of surface plasmon modes and potential lasing.
研究成果
The proposed graphene-black phosphorus heterostructure with combined lateral and vertical injection can achieve negative dynamic conductivity in the THz range, enabling the amplification of surface plasmon modes and potential lasing. The cooling effect of hole injection from black phosphorus enhances the population inversion, making this structure promising for new types of THz sources.
研究不足
The study is theoretical and does not include experimental validation. The practical realization of the proposed heterostructure may face challenges related to material quality, contact resistance, and integration with existing THz technologies.
1：Experimental Design and Method Selection:
The study involves the design of a graphene-black phosphorus heterostructure with lateral electron and vertical hole injection to achieve population inversion and negative dynamic conductivity in the THz range.
2：Sample Selection and Data Sources:
The heterostructure consists of a graphene layer with lateral electron injection from side contacts and a black phosphorus layer for vertical hole injection.
3：List of Experimental Equipment and Materials:
Graphene layer, black phosphorus layer, side contacts for electron injection, and a substrate for the heterostructure.
4：Experimental Procedures and Operational Workflow:
The study involves theoretical modeling and evaluation of the heterostructure's properties, including carrier dynamics, effective temperature, and dynamic conductivity.
5：Data Analysis Methods:
The analysis includes calculations of carrier effective temperature, quasi-Fermi energies, dynamic THz conductivity, and surface plasmon amplification coefficient.
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