研究目的
To introduce a UV-LED lithography system for the fabrication of millimeter tall 3-D high-aspect-ratio structures, expanding the design and fabrication capability for various applications in RF, Bio, and Optical microdevices.
研究成果
The high-intensity UV-LED lithography system successfully fabricated millimeter-tall 3-D microstructures, demonstrating expanded design and fabrication capabilities for RF- and Bio-MEMS fields. The system's versatility was shown through the fabrication of various structures, including pillars, artistic flowers, microneedle arrays, and a horn structure for an RF antenna.
研究不足
The diffraction of UV light limits the size of photomask patterns for thick photoresist lithography. The exposure time is relatively long for tall structures.
1：Experimental Design and Method Selection:
The system includes a high-intensity collimated UV-LED light source and a tilt-rotational sample stage to create 3-D light patterns inside a photoresist layer.
2：Sample Selection and Data Sources:
Two different photosensitive polymers, SU-8 and LF55GN, were tested.
3：List of Experimental Equipment and Materials:
5-by-5
4：5-W LED array with 5° collimated lens, 4-inch-diameter sample holding plate, microcontroller, SU-8 2025, LF55GN, isopropyl alcohol (IPA). Experimental Procedures and Operational Workflow:
The light source was rotated during exposure to uniformly distribute light. The sample was baked, exposed to UV light, baked again, developed, rinsed, and dried.
5：Data Analysis Methods:
The light intensity distribution was analyzed using ImageJ software.
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