研究目的
To further improve the power conversion efficiency (PCE) of organic solar cells (OSCs) based on ternary blend active layers by achieving high open-circuit voltage (Voc) through the alignment of the energy levels of the ternary blend active layers using machine-learning approaches.
研究成果
The machine-learning approach demonstrates that the Voc of the ternary OSCs can be predicted from the energy levels of the ternary blends with high accuracy. The combination of domain knowledge, feature selection, and machine-learning model could provide the design principles to fabricate promising fullerene derivatives-based ternary OSCs and reveal new correlations between the electronic properties of the organic materials and the Voc.
研究不足
The predictive capabilities for Voc are still limited (e.g., R2 > 0.9), because the derived machine-learning model did not consider experimental details such as the effects of solvents and side chains upon aggregation, and of the donor/acceptor interface morphology.
1:Experimental Design and Method Selection:
The study uses data-driven strategies to generate a model based on available experimental data and predicts Voc using machine-learning methods (Random Forest regression and Support Vector regression).
2:Sample Selection and Data Sources:
121 Voc data points were collected from recently reported review articles, consisting of six potential variables as input features and one response variable (Voc) as the target output.
3:List of Experimental Equipment and Materials:
Ultraviolet photoelectron spectroscopy (UPS) and inverse photoelectron spectroscopy (IPES) were used to determine the energy levels of thin films.
4:Experimental Procedures and Operational Workflow:
The dataset was split into training (80%) and testing (20%) sets. The Random Forest and Support Vector regression models were trained and evaluated.
5:Data Analysis Methods:
The root-mean-squared error (RMSE) and the coefficient of determination (R2) were used to evaluate the prediction performance of the machine-learning models.
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